| 摘要 |
PROBLEM TO BE SOLVED: To provide a face light emitting semiconductor laser for suppressing high-order transverse-mode oscillations and obtaining high-output fundamental transverse-mode oscillation. SOLUTION: The face light emitting semiconductor laser 10 includes a substrate 100; an n-type lower DBR 102, an active region 104, a p-type upper DBR 106, a mesa M formed on the substrate; a current constriction layer 108, formed within the mesa M and including a conductive region 108B surrounded by an oxidized region 108A oxidized selectively; an annular p-side electrode 110 formed at the tip of the mesa M and prescribing a light emitting opening 110A; a first insulating film 112 for covering the light emitting opening 110A; and a second annular insulating film 114, including a refractive index larger than that of the first insulating film. The refractive index of a region where the second insulating film 114 of the light emitting opening 110A exists is smaller than that of a region, where there exists only the first insulating film 112. COPYRIGHT: (C)2011,JPO&INPIT
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