| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge semiconductor laser capable of improving a heat dissipation at an end of the ridge semiconductor laser, and to provide a method of manufacturing the same. SOLUTION: The ridge semiconductor laser 1 includes a semiconductor substrate SB including one end 31, an intermediate part 32, and the other end 33 disposed in a predetermined axis Ax direction in order, a cladding layer C1 provided on a main surface a1 of the semiconductor substrate SB, a core region 10 provided on the cladding layer C1, a ridge C2 provided on the core region 10 and extended in the predetermined Ax direction, an insulating layer 19 provided on the ridge C2, an electrode E1 provided on the ridge C2 and the insulating layer 19 and connected to the ridge C2, and a resin layer 6 so provided on the insulating layer 19 on the intermediate part 32 as to embed the ridge C2. The resin layer 6 on the intermediate part 32 contacts with the side surface of the insulating layer 19, and the electrode E1 on the one end 31 and the other end 33 extends to the insulating layer 19 on a side surface 5 of the ridge C2. COPYRIGHT: (C)2011,JPO&INPIT
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