| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a substrate processing device that shorten a cleaning time to improve productivity. SOLUTION: After a process of forming a thin film on a substrate is repeated in which a first gas capable of depositing a film alone and a second gas incapable of depositing a film alone are supplied into a processing container respectively through a first nozzle portion and a second nozzle portion raised from a lower part to an upper part in the processing container to make the gases flow downward, and exhausted from an exhaust port provided to the lower part of the processing container, a gas obtained by adding at least part of the second gas to a halogen-based gas is supplied into the processing container through a third nozzle portion provided to a ceiling wall of the processing container, and the halogen-based gas is supplied into the processing container through the first nozzle portion to make those gases flow downward therein, and exhausted from the exhaust port to remove deposits sticking in the processing container and the first nozzle portion. COPYRIGHT: (C)2011,JPO&INPIT
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