METHOD FOR MANUFACTURING A MAGNETORESISTIVE ELEMENT

摘要

Provided is a method for forming a metal oxide layer (for example, a magnesium oxide layer) by oxidizing a metal layer (for example, a magnesium layer). Said method can be used to manufacture a magnetoresistive element with a higher magnetoresistance ratio. The provided method includes: a step in which a substrate with a first ferromagnetic layer formed thereon is prepared; a step in which a tunnel barrier layer is fabricated on top of the first ferromagnetic layer; and a step in which a second ferromagnetic layer is formed on top of the tunnel barrier layer. The step in which the tunnel barrier layer is fabricated includes: a step in which a first metal layer is formed on top of the first ferromagnetic layer; a step in which the first metal layer is oxidized; a step in which a second metal layer is formed on top of the oxidized first metal layer; and a step in which the oxidized first metal layer and the second metal layer are heat-treated at a temperature at which the second metal layer vaporizes.