| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent residues by forming an incline profile in a boundary between a cell region and a recessed peri region through first to third etching processes. CONSTITUTION: A photosensitive pattern is formed on an insulation layer(26A) by using a peri open mask. The insulation layer is etched by using the photosensitive pattern as an etching barrier. The photosensitive pattern is etched to have an incline sidewall profile. A substrate(21) is recessed by using the etched photosensitive pattern and the insulation layer as the etching barrier. A bit line(32) is formed on the cell region and a peri gate(33) is formed on the peri region.</p> |
