发明名称 METHOD FOR FABRICATING A HEAT RADIATING TYPE SEMICONDUCTOR PACKAGE
摘要 PURPOSE: A method for manufacturing a heat radiation type semiconductor package is provided to prevent the deterioration of heat dissipation due to resin contaminants by removing a protection layer after a molding unit is formed with resin materials to expose the protection layer on the upper side of a heat sink. CONSTITUTION: One or more semiconductor chips are mounted on a substrate(110) by a wire member(124). A heat sink has a protection layer and is contacted with one end of a semiconductor chip(120). A molding unit is formed with resin materials to surround the semiconductor chip and form a protection layer exposing hole for exposing the protection layer. A recess is formed by cutting from the molding unit overlapped with the heat sink to the protection layer. UV light is radiated to weaken the adhesion of the protection layer which is exposed to the outside through the protection layer exposing hole. The heat sink is exposed to the outside by removing the protection layer and the outer frame of the protection layer exposing hole.
申请公布号 KR20110077286(A) 申请公布日期 2011.07.07
申请号 KR20090133809 申请日期 2009.12.30
申请人 HANA MICRON CO., LTD. 发明人 JUNG, YONG HA;LEE, HYUN WOO;LEE, JUNG WON
分类号 H01L23/34 主分类号 H01L23/34
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