发明名称 METHOD FOR METAL REWORK OF SEMICONDUCTOR DEVICE GENERATED METAL CORROSION
摘要 PURPOSE: A method for metal rework of a metal corrosion generating device is provided to reduce degradation rate and a process loss and to prevent degradation of yield by directly eliminating a corroded metal from a corresponding layer via a rework sequence. CONSTITUTION: A W-CMP(W-Chemical Mechanical Polish) process is performed for forming metal wiring(S100). A metal deposition process is performed and a target material is deposited on a workpiece(S110). The target material is scrubbed via a scrubber(S120). A metal PEP(Photo Engraving Process) is performed(S130). A metal RIE(Reactive Ion Etch) is performed(S140).
申请公布号 KR20110079145(A) 申请公布日期 2011.07.07
申请号 KR20090136119 申请日期 2009.12.31
申请人 DONGBU HITEK CO., LTD. 发明人 CHOI, DONG HO
分类号 H01L21/3065;H01L21/28 主分类号 H01L21/3065
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