| 摘要 |
PURPOSE: A bipolar transistor and a manufacturing method thereof are provided to increase a speed and a current gain by forming a second conductive emitter region including a step with first conductive outer base regions. CONSTITUTION: A second conductive buried layer(215) is formed in a semiconductor substrate. A field oxide layer is formed on the semiconductor substrate with a second conductive buried layer. A base region(245) is formed on the semiconductor substrate under the field oxide layer to be separated from the second conductive buried layer. Outer base regions are formed on the surface of the inner base region adjacent to both sides of the field oxide layer. A groove including a step with the surface of the semiconductor substrate is formed by removing the field oxide layer. A second conductive emitter region(260) is formed by implanting a second conductive impurity in the surface of the inner base region under the groove.
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