| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method of a semiconductor device are provided to prevent hot carrier effect and a short channel effect by efficiently reducing the increase of electric field through a horizontal and vertical dual LDD structure. CONSTITUTION: In a semiconductor device and a manufacturing method of a semiconductor device, a well region(100) is formed on a semiconductor substrate. A first LDD area(110) crosses from the surface of the well region in longitudinal direction A gate insulating layer(120) and a gate(130) are formed on the well region between the first LDD regions. A second LDD region(112) is formed on the top side of the well region while forming a horizontal structure along the surface of the well region A spacer(140) is formed on the part of the second LDD region.
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