| 摘要 |
PURPOSE: A method for forming the butting contact of a semiconductor device is provided to improve the reliability of a device by preventing a leakage current due to a damaged spacer. CONSTITUTION: A gate(301) and a spacer(304) are formed on a semiconductor substrate(300). Silicide(308) is formed on the gate and an active area(306) through a salicide process. A linear insulation layer(310) with a high dielectric constant is formed on the semiconductor substrate. A PMD(Premetal Dielectric) layer(312) is formed on the upper side of the linear insulation layer. A photoresist layer is coated on the upper side of the PMD layer.
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