| 摘要 |
PURPOSE: A method for forming a P type poly gate and a method for manufacturing a semiconductor device using the same are provided to diffuse p type impurities to the lower side of a poly gate without a boron penetration phenomenon by diffusing the p type impurities through a thermal process after an impurity block area is formed on the middle area of a poly gate. CONSTITUTION: An impurity block area(112) is formed in a n type doped poly gate(110) and is set to correspond to 1/3(T1) to 1/2(T2) of the total thickness of a poly gate. The poly gate with the impurity block area is doped with a p type impurity. The p type impurity is accumulated in the impurity block area. The p type impurity accumulated in the impurity block area is diffused to the poly gate by a thermal process.
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