SURFACE TREATMENT METHOD FOR OHMIC CONTACT

摘要

PURPOSE: A surface processing method for an ohmic contact is provided to improve the electric property of an ohmic contact by efficiently removing the interface oxide on the surface by processing the surface of an N-face p-type GaN with (NH4)2S solutions as a sulfur flour. CONSTITUTION: A p type GaN layer(11) is formed on a silicon substrate(14). The surface of an N-face p-type GaN is processed with (NH4)2S for an ohmic contact. A metal layer(15) is formed on the N-face p type GaN which is processed with a sulfur flour.