| 摘要 |
PROBLEM TO BE SOLVED: To more easily manufacture an SOI semiconductor substrate at a higher speed. SOLUTION: The SOI semiconductor substrate manufacturing method includes steps of: activating a support substrate surface and an insulator layer surface by irradiating the insulator layer surface where an insulator layer is exposed and the support substrate surface in a support substrate in an active layer substrate where the semiconductor layer and the insulator layer are laminated with particles; and bonding the support substrate and the active layer substrate by bringing the support substrate surface into contact with the insulator layer surface. The method also includes bonding the support substrate and the active layer substrate without heating the support substrate and the active layer substrate, and the SOI semiconductor substrate is more easily manufactured at a higher speed. COPYRIGHT: (C)2011,JPO&INPIT |
