发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED BY THE SAME |
摘要 |
Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
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申请公布号 |
US2011165761(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100961054 |
申请日期 |
2010.12.06 |
申请人 |
KIM MYUNG-JONG;YEO IN-SEOK;KO DAE-HONG;SOHN HYUN-CHUL;CHO MANN-HO;KIM SANG-YEON |
发明人 |
KIM MYUNG-JONG;YEO IN-SEOK;KO DAE-HONG;SOHN HYUN-CHUL;CHO MANN-HO;KIM SANG-YEON |
分类号 |
H01L21/20;B82Y40/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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