发明名称 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED BY THE SAME
摘要 Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
申请公布号 US2011165761(A1) 申请公布日期 2011.07.07
申请号 US20100961054 申请日期 2010.12.06
申请人 KIM MYUNG-JONG;YEO IN-SEOK;KO DAE-HONG;SOHN HYUN-CHUL;CHO MANN-HO;KIM SANG-YEON 发明人 KIM MYUNG-JONG;YEO IN-SEOK;KO DAE-HONG;SOHN HYUN-CHUL;CHO MANN-HO;KIM SANG-YEON
分类号 H01L21/20;B82Y40/00 主分类号 H01L21/20
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