METHOD AND STRUCTURE FOR FORMING HIGH-PERFORMANCE FETS WITH EMBEDDED STRESSORS

摘要

A high-performance semiconductor structure and a method of fabricating such a structure are provided. The semiconductor structure includes at least one gate stack (18), e.g., FET, located on an upper surface (14) of a semiconductor substrate (12). The structure further includes a first epitaxy semiconductor material (34) that induces a strain upon a channel (40) of the at least one gate stack. The first epitaxy semiconductor material is located at a footprint of the at least one gate stack substantially within a pair of recessed regions (28) in the substrate which are present on opposite sides of the at least one gate stack. A diffused extension region (38) is located within an upper surface of said first epitaxy semiconductor material in each of the recessed regions. The structure further includes a second epitaxy semiconductor material (36) located on an upper surface of the diffused extension region. The second epitaxy semiconductor material has a higher dopant concentration than the first epitaxy semiconductor material.