| 摘要 |
PURPOSE: A backside light receiving image sensor and a manufacturing method thereof are provided to cut off electric cross talk by maintaining an electrically perfect isolation state. CONSTITUTION: Front side element isolation areas(300a,300b) is formed in the front of a substrate(100). A photodiode(120) is formed in an area defined as a front element isolation area. An interlayer insulating layer(160) and a wiring(140) are formed on the front of the substrate. Backside element isolation areas(200a,200b) are formed at a backside of the substrate and are connected to the front element isolation area. A micro lens(180) is formed in a backside of the substrate.
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