| 摘要 |
PURPOSE: A semiconductor and a manufacturing method thereof are provided to make it possible forming one trench by forming a plurality of sub trenches with sequential depths. CONSTITUTION: The first sub trench(111) is formed on a semiconductor substrate(100). The first passivation film(111a) is formed on an inner side of the first trench. The second sub trench is formed on a floor of the first trench. The second passivation film is formed on an inner side of the second sub trench. An insulating layer is formed on an inner side of the second sub trench and the first sub trench. The conducting material is filled up an inner side of the second sub trench and the first sub trench and an electrode is formed.
|
