| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to improve the property of a light emitting device to a reverse voltage by protecting the light emitting device from external electrical impact. CONSTITUTION: In a semiconductor light emitting device, two diodes(A,B) are formed on a substrate(10). Each diode comprises an n-type semiconductor layer(30), an active layer(40), and a p-type semiconductor layer(50). A current diffusion electrode(60) is formed in the p-type semiconductor layer. A p-bonding pad(70) and an n-bonding pad(80) are electrically connected to the each P-type semiconductor layer and the n-type semiconductor layer. The p-bonding pad and the n-bonding pad are connected to a wire bonding(85).
|
