| 发明名称 |
METHOD OF MANUFACTURING THIN FILM INTEGRATED CIRCUIT |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film integrated circuit having an extremely thin film thickness and an IC chip or the like having a thin film integrated circuit to prevent unevenness formed on a surface and deteriorated design performance when an IC chip comprising a silicon wafer is mounted to a commodity container because the IC chip is thick. <P>SOLUTION: The IC chip having a thin film integrated circuit is different from an integrated circuit formed of conventional silicon wafer and includes a semiconductor film as an active region, for example, as a channel region when it is a thin film transistor. Since such an IC chip is extremely thin, design performance is not deteriorated even if the IC chip is mounted to a product such as a card or a container. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011135088(A) |
申请公布日期 |
2011.07.07 |
| 申请号 |
JP20110023531 |
申请日期 |
2011.02.07 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ARAI YASUYUKI;ISHIKAWA AKIRA;TAKAYAMA TORU;MARUYAMA JUNYA;GOTO YUGO;FUKUMOTO YUMIKO;EBATO YUKO |
| 分类号 |
H01L27/12;G06K19/07;G06K19/077;H01L21/02;H01L21/77;H01L21/8234;H01L21/84;H01L27/00;H01L27/08;H01L27/088;H01L29/786 |
主分类号 |
H01L27/12 |
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