| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of manufacturing a semiconductor substrate including a monocrystalline silicon carbide layer, and particularly, a technology of manufacturing a semiconductor substrate further including a stress relief silicon carbide layer on a surface layer part of a silicon substrate. SOLUTION: The method of manufacturing a silicon semiconductor substrate sequentially executes a step (1) of preparing the silicon substrate, a step (2) of implanting carbon ions into the silicon substrate to form a carbon-containing layer where silicon is mixed with carbon, a step (3) of heat-treating the substrate to form the stress relief silicon carbide film layer and an oxide film cap from the carbon-containing layer, a step (4) of removing the oxide film cap, a step (5) of forming a second oxide film cap, a step (6) of implanting carbon ions into a silicon layer between the stress relief silicon carbide film layer and the second oxide film cap to form a carbon-containing layer where silicon is mixed with carbon, a step (7) of heat-treating the substrate to form a crystal growth silicon carbide film layer from the carbon-containing layer, and a step (8) of removing the oxide film caps formed on the surface of the substrate. COPYRIGHT: (C)2011,JPO&INPIT
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