| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor device, such that dissolution of a barrier film in a polish can be suppressed. SOLUTION: The semiconductor device includes an insulating film 107 formed on a semiconductor substrate and having a groove 109, and a wiring 115 having a first barrier film 111 and a second barrier film 112 formed in the groove 109. The first barrier film 111 is formed on a side wall and a bottom surface of the groove 109, and the second barrier film 112 is formed in the groove 109 to cover the first barrier film 111. Further, the second barrier film 112 is formed on the downside of an upper surface of the wiring 115. COPYRIGHT: (C)2011,JPO&INPIT
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