发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of improving productivity of a substrate by forcibly removing cracks and film peeling and preventing a reaction tube from generating any particles. SOLUTION: Two steps are executed, namely a step of carrying a deposited substrate 2 from a treatment chamber 32 and increasing a temperature in the treatment chamber from a deposition temperature, and a step of supplying an activation gas activated by plasma excitation in the treatment chamber and a mixed gas of a nitriding agent after the increased temperature in the treatment chamber reaches a stable, fixed value and forcibly removing a film causing cracks and film peeling because of adhesion to the inside of the treatment chamber. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011134748(A) 申请公布日期 2011.07.07
申请号 JP20090290254 申请日期 2009.12.22
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YONEBAYASHI MASAHIRO
分类号 H01L21/31 主分类号 H01L21/31
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