发明名称 THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A thermal treatment apparatus having a first light source emitting a first light having light diffusion property, a reflectance measuring unit irradiating a treatment target with the light from plural directions by the first light source and determining a light reflectance of the treatment target, a light irradiation controller adjusting an intensity of a second light of a second light source on the basis of the light reflectance, the second light has diffusion property, and a thermal treatment unit irradiating the treatment target with the second light having adjusted the intensity of the second light by the light irradiation controller.
申请公布号 US2011165703(A1) 申请公布日期 2011.07.07
申请号 US201113048039 申请日期 2011.03.15
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 KUBO TOMOHIRO
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址