发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING STRUCTURES |
摘要 |
In methods of manufacturing a semiconductor device, a plurality of gate structures spaced apart from each other and oxide layer patterns. A sputtering process using the oxide layer patterns as a sputtering target to connect the oxide layer patterns on the adjacent gate structures to each other is performed, so that a gap is formed between the gate structures. A volume of the gap is formed uniformly to have desired volume by controlling a thickness of the oxide layer patterns.
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申请公布号 |
US2011165750(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20110984940 |
申请日期 |
2011.01.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG JUN-KYU;PARK YOUNG-GEUN;HWANG KI-HYUN;CHOI HAN-MEI;PARK CHAN-JIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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