| 摘要 |
Methods for removing titanium nitride etch by-products from process chambers are provided herein. In some embodiments, a method for the removal of titanium nitride hard mask etch by-products from a process chamber includes processing a substrate having a titanium nitride hard mask. A plasma is then formed from a cleaning gas comprising a chlorine (Cl2) containing gas in the process chamber to remove at least some of the residual titanium nitride etch by-products. In some embodiments, a method for removing titanium nitride etch by-products from process chambers includes a computer readable medium, having instructions stored thereon which, when executed by a controller, causes a process chamber having a substrate comprising a titanium nitride hard mask to be processed. A plasma is then formed from a cleaning gas comprising a chlorine containing gas in the process chamber to remove the residual titanium nitride etch by-products.
|
