发明名称 |
FILM FORMING METHOD AND PROCESSING SYSTEM |
摘要 |
Provided is a film-forming method for performing a film-forming process on a surface of a target substrate to be processed in an evacuable processing chamber, a recessed portion being formed on the surface of the target substrate. The method includes a transition metal-containing film processing process in which a transition metal-containing film is formed by a heat treatment by using a source gas containing a transition metal; and a metal film forming process in which a metal film containing an element of the group VIII of the periodic table is formed.
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申请公布号 |
US2011163451(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20110987663 |
申请日期 |
2011.01.10 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;MIZUSAWA YASUSHI |
分类号 |
H01L23/532;B05C11/00;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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