发明名称 GAS INJECTION APPARATUS AND SUBSTRATE PROCESSING APPARATUS USING SAME
摘要 The present invention relates to a gas injection apparatus and a substrate processing apparatus using the same. The gas injection apparatus according to the present invention is installed at an upper part of a substrate supporting portion for supporting a plurality of substrates which is rotatably installed in an inside of a chamber. The gas injection apparatus comprises a plurality of gas injection units for injecting the process gas onto the substrates which are arranged along a circumferential direction on the basis of a central point of the substrate supporting portion, wherein at least one of the gas injection units comprises: a top plate having an inlet in which the process gas is introduced; and an injection plate which is arranged at a lower part of the top plate to form a gas diffusion space along a radius direction of the substrate supporting portion apart from the top plate and includes a plurality of gas injection holes formed at a lower side of the gas diffusion space to inject onto the substrate the process gas which is introduced through the inlet and is diffused in the gas diffusion space. The gas injection apparatus is characterized in that the process gas is introduced from a plurality of points to the gas diffusion space.
申请公布号 WO2011025214(A3) 申请公布日期 2011.07.07
申请号 WO2010KR05628 申请日期 2010.08.24
申请人 IPS LTD.;LEE, JUNG-HWAN;PARK, WOO-YOUNG;HAHM, TAE-HO 发明人 LEE, JUNG-HWAN;PARK, WOO-YOUNG;HAHM, TAE-HO
分类号 H01L21/20 主分类号 H01L21/20
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