EPITAXIAL WAFER FOR LIGHT EMITTING DIODE, LIGHT EMITTING DIODE CHIP AND METHODS FOR MANUFACTURING THE SAME

摘要

An epitaxial wafer for a light emitting diode and a method for manufacturing the same are provided. The method comprises the steps of: providing a substrate(401); forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n type semiconductor layer(403), a first light emitting layer(405), a first anti-diffusion layer(404) between a first n type semiconductor layer and a first light emitting layer, a first p type semiconductor layer(408), and a second anti-diffusion layer(406) between the first p type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate opposite to the first surface. A LED chip and a method for manufacturing the same are also provided.