| 摘要 |
PURPOSE: A reference current generating circuit in a semiconductor memory device is provided to stably perform startup when an idle mode is converted into an operation mode, thereby obtaining a quick and stable output reference current. CONSTITUTION: A startup circuit unit(100) is made of a first current mirror and a second current mirror. The first current mirror is sequentially turned on by an increase of a supplied power voltage. The second current mirror is connected to the first current mirror. A self biasing circuit unit(200) is made of a third current mirror and a fourth current mirror. The third current mirror is sequentially biased by output of a startup circuit unit. The fourth current mirror is connected to the third current mirror. A reference current output unit(300) mirrors a voltage generated in the self biasing circuit unit to generate a reference current. |
