| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to secure a stable channel length by forming the sidewall of a photo resist pattern with a spacer shape. CONSTITUTION: A well is formed on a substrate. An insulation film pattern exposing an active area is formed on the substrate with the well. A first ion implantation area is formed in the well by implanting a first impurity ion using the insulation film pattern. An incline spacer(40) is formed on both sidewalls of the insulation film pattern by an etching process. A second ion implantation area(50) is formed in the well by implanting a second impurity ion using the insulation film pattern with the incline spacer. A channel region diffused from the second ion implantation area and a body area diffused from the first ion implantation area are formed by thermally processing the substrate with the first and second ion implantation areas.</p> |
