ETCHING SOLUTION COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THEREOF

摘要

PURPOSE: An etching solution composition is provided to control an etch rate, to improve the uniformity of an etched layer, and to minimize the influence on peripheral materials excluding the etched layer. CONSTITUTION: An etching solution composition comprises 0.5-2 volume % of sulfuric acids, 0.5-5 volume % of phosphoric acids, 0.1-1 volume % of weak acids having an acid association constant(pKa) value of 3.0 or greater, 0.01-0.1 volume % of hydrogen peroxide, and pure water. The weak acid is acetic acids. The etching solution composition is used for a dip type etching process.