| 摘要 |
PURPOSE: A resistor solution for imprint and a method for fabricating a thin film pattern using the same are provided to improve strip properties and to enable a rework process since a resist solution for imprint can be decomposed in a strip process and a rework process. CONSTITUTION: A resistor solution for imprint comprises 70~95% of organic liquid including a liquid polymer precursor and 5~30% of a solution with solubility in an organic solvent and an acid solution. The organic liquid includes 90~99.98% of the liquid polymer precursor, 0.01~5% of photoinitiators, and 0.01~5% of surfactants. The liquid polymer precursor is HEA(2-Hydroxyethyl acrylate), EGDMA(Ethyleneglycol dimethacrylate), EGPEA(Ethyleneglycol phenyletheracrylate), HPA(Hydroxypropyl acrylate), and HPPA(Hydroxy phenoxypropylacrylate).
|
