| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose performance can be improved more by suppressing a leak of a magnetic field in a magnetoresistive element more. SOLUTION: A lower electrode 31 is formed on a principal surface of a semiconductor substrate 100. A magnetoresistive element 32 includes a fixed layer 35, a tunnel insulating film 38, and a free layer 37. An upper electrode 44 is disposed on the principal surface of the free layer 37 on the opposite side from one principal surface facing the tunnel insulating film 38. The fixed layer 35 constituting the magnetoresistive element 32 is disposed on one principal surface of the lower electrode 31, and has its direction of magnetization fixed. The free layer 37 is disposed on the principal surface of the tunnel insulating film 38 on the opposite side from one principal surface facing the fixed layer 35, and the direction of magnetization thereof is changeable. In a direction crossing the stacking direction of the lower electrode 31, fixed layer 35, tunnel insulating film 38, free layer 37, and upper electrode 44, the width of the upper electrode 44 is smaller than those of the lower electrode 31 and fixed layer 35. COPYRIGHT: (C)2011,JPO&INPIT
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