| 摘要 |
PROBLEM TO BE SOLVED: To provide a GeOI substrate with a Ge layer having very flat junction interface with an oxidized layer, and having good quality characteristics. SOLUTION: The method of manufacturing a GeOI substrate includes the steps of adhering a GeOI substrate 10 and an Si substrate 20 having an oxidized layer 25 formed thereon via the oxidized layer 25 to form a laminate 30, performing a first heat treatment on the laminate 30 at a maximum achieving temperature within a given range, processing the laminate 30 subjected to the first heat treatment from the surface of the laminate 30 on the Ge substrate 10 side to make the Ge substrate 10 thin to yield a Ge layer 10a, and performing a second heat treatment on the laminate 30 having the Ge layer 10a formed thereon at a maximum achieving temperature of 700°C or higher and 900°C or lower. COPYRIGHT: (C)2011,JPO&INPIT
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