| 摘要 |
PROBLEM TO BE SOLVED: To securely prevent reduction of an oxygen barrier when a capacitance insulating film is crystallized in a semiconductor device having the capacitance insulating film using ferroelectric or high dielectric. SOLUTION: The semiconductor device is equipped with: a plurality of oxygen barrier films 16; and a capacitor 21 formed of a lower electrode 17, the capacitive insulating film 19 and an upper electrode 20; and an interlayer insulating film 22 formed to cover the plurality of capacitors 21 on the plurality of oxygen barrier films 16. An upper face of a part positioned between the adjacent capacitors 21 in the interlayer insulating film 22 is positioned lower than an upper face of a part positioned just above the capacitor 21 in the interlayer insulating film 22. COPYRIGHT: (C)2011,JPO&INPIT
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