发明名称 Method for Manufacturing Microelectronic Devices and Devices According to Such Methods
摘要 A method is disclosed for manufacturing a sealed cavity in a microelectronic device, comprising forming a sacrificial layer at least at locations where the cavity is to be provided, depositing a membrane layer over the top of the sacrificial layer, patterning the membrane layer in at least two separate membrane layer blocks, removing the sacrificial layer through the membrane layer, and sealing the cavity by sealing the membrane layer, wherein patterning the membrane layer is performed after removal of the sacrificial layer.
申请公布号 US2011163399(A1) 申请公布日期 2011.07.07
申请号 US20100955539 申请日期 2010.11.29
申请人 IMEC 发明人 WITVROUW ANN;HASPESLAGH LUC;CLAES GERT
分类号 H01L29/84;H01L21/62 主分类号 H01L29/84
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