发明名称 |
SEMICONDUCTOR CONTACT STRUCTURE AND METHOD OF FABRICATING THE SAME |
摘要 |
Semiconductor fabricating technology is provided, and particularly, a method of fabricating a semiconductor device improving a contact characteristic between a silicon layer including carbon and a metal layer during a process of fabricating a semiconductor device is provided. A semiconductor device including the silicon layer including carbon and the metal layer formed on the silicon layer is provided. A metal silicide layer is interposed between the silicon layer including carbon and the metal layer.
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申请公布号 |
US2011163394(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US20100813107 |
申请日期 |
2010.06.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JOO-SUNG;PARK SE-KEUN |
分类号 |
H01L29/78;H01L23/532 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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