| 摘要 |
A method for manufacturing a semiconductor apparatus includes forming a contact pad layer over a substrate in an active region; patterning the contact pad layer and the substrate to form a first trench, the first trench defining a contact pad pattern; etching the substrate to form a second trench that extends vertically from the first trench; forming a gate insulating pattern over the substrate in the second trench; and forming a buried gate in the second trench.
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