发明名称 |
METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING |
摘要 |
A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
|
申请公布号 |
US2011162797(A1) |
申请公布日期 |
2011.07.07 |
申请号 |
US201113045239 |
申请日期 |
2011.03.10 |
申请人 |
KUMAR AJAY;CHANDRACHOOD MADHAVI R;LEWINGTON RICHARD;BIVENS DARIN;SABHARWAL AMITABH;PANAYIL SHEEBA J;OUYE ALAN HIROSHI |
发明人 |
KUMAR AJAY;CHANDRACHOOD MADHAVI R.;LEWINGTON RICHARD;BIVENS DARIN;SABHARWAL AMITABH;PANAYIL SHEEBA J.;OUYE ALAN HIROSHI |
分类号 |
C23F1/08 |
主分类号 |
C23F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|