TRANSPARENT GRAPHENE ELECTRODE, AND FLEXIBLE SILICON THIN FILM SEMICONDUCTOR DEVICE CONTAINING SAME
摘要
The present invention relates to a transparent graphene electrode, a flexible silicon thin film semiconductor device containing the same, and a preparation method thereof. A flexible and transparent thin film semiconductor device can be easily prepared by using the transparent graphene electrode comprising a large-area graphene film prepared by chemical vapor deposition as a conductive film.
申请公布号
WO2011081473(A2)
申请公布日期
2011.07.07
申请号
WO2010KR09555
申请日期
2010.12.30
申请人
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION;AHN, JONGHYUN;HONG, BYUNG HEE;JANG, HOUK;JANG, SUKJAE;KOO, JAE BON