发明名称 TRANSPARENT GRAPHENE ELECTRODE, AND FLEXIBLE SILICON THIN FILM SEMICONDUCTOR DEVICE CONTAINING SAME
摘要 The present invention relates to a transparent graphene electrode, a flexible silicon thin film semiconductor device containing the same, and a preparation method thereof. A flexible and transparent thin film semiconductor device can be easily prepared by using the transparent graphene electrode comprising a large-area graphene film prepared by chemical vapor deposition as a conductive film.
申请公布号 WO2011081473(A2) 申请公布日期 2011.07.07
申请号 WO2010KR09555 申请日期 2010.12.30
申请人 SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION;AHN, JONGHYUN;HONG, BYUNG HEE;JANG, HOUK;JANG, SUKJAE;KOO, JAE BON 发明人 AHN, JONGHYUN;HONG, BYUNG HEE;JANG, HOUK;JANG, SUKJAE;KOO, JAE BON
分类号 B41M5/03 主分类号 B41M5/03
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