SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A semiconductor device (100) and a method for producing the same are provided. The semiconductor device (100) comprises: a semiconductor material fin formed in a semiconductor material layer on a semiconductor substrate (21); a source region (12) and a drain region (13) formed in the semiconductor substrate (21) adjacent to the two ends of the fin; a channel region (11) formed in the middle portion of the fin; a stack of a gate dielectric (14) and a gate (15) formed on one side of the fin which extends back to the side of the fin and is parallel to the surface of the semiconductor substrate (21) and is isolated from the semiconductor substrate (21) by an insulator layer (22'). The semiconductor device (100) reduced the effect of the short channel, the parasitic capacitance and the parasitic resistance, and is helpful for reducing the dimension of the transistor and enhancing the performance of the transistor thereby.