| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to easily manufacture a floating gate with p type ions while enhancing characteristics of a memory device because the p type ions are injected into a channel area arranged under the floating gate. CONSTITUTION: A tunnel oxide film and a floating gate(310) are formed on a semiconductor substrate. An ONO pattern(320) and a control gate(330) are formed on the floating gate. The floating gate comprises a single crystal silicon into which p type ions are injected.</p> |
