发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device and an operating method thereof are provided to reduce a chip size by minimizing the area of a circuit to generate the equalization signal through one power voltage. CONSTITUTION: In a semiconductor memory device and an operating method thereof, a power supply unit(550) supplies the power of a main power voltage terminal to a sub voltage terminal in response to a mat selection signal for a corresponding memory cell mat. An equalization signal generating unit(530) is connected to the sub voltage terminal and generates the equalization signal corresponding to the voltage level of the sub voltage terminal in response to an equalization control signal. A bit line equalization unit equalizes a positive/negative bit line. A voltage regulator prevent the voltage of the sub voltage terminal from dropped below a certain level.
申请公布号 KR20110079445(A) 申请公布日期 2011.07.07
申请号 KR20100033858 申请日期 2010.04.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, TAE HYUNG
分类号 G11C7/12;G11C5/14 主分类号 G11C7/12
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