| 摘要 |
PURPOSE: A leakage monitoring system and an image sensor including the same are provided to enhance productivity and image quality. CONSTITUTION: A photodiode(120) is buried into a substrate(110). A gate is formed on the substrate at one side of the photodiode. The second conductive type ion implantation region(127) is formed at the substrate between the photodiode and the transistor. The second silicide(142) is formed on the second conductive type ion implantation region. The connector is formed in the substrate of a lower part of the gate.
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