| 摘要 |
PURPOSE: An image sensor pixel is provided to prevent a blooming phenomenon and to reduce electric cross talk influencing surrounding pixels by controlling a body voltage of an image sensor by the Vth of a junction diode. CONSTITUTION: A photodiode(10) is formed within a semiconductor substrate. A diffusion node area is formed within the semiconductor substrate. A VDD metal line supplies a VDD bias between a gate electrode of a rest transistor and a gate electrode of a drive transistor among the transistors formed on the semiconductor substrate. The first conductive deep well domain is formed under the photodiode. The second conductive tunnel layer is formed at one side of the photodiode. A VBC(Voltage Blooming Control) supplies VBC for the second conductive tunnel layer.
|
