| 摘要 |
PURPOSE: A method for manufacturing a semiconductor is provided to form an NMOS and a PMOS concurrently on an MESA island by using a MESA isolation method. CONSTITUTION: An oxide film is formed on a silicon substrate. The first polysilicon is formed on the oxide film. A protective film(106) is formed so that it can cover the first polysilicon. The second polysilicons(108) are formed on the protective film. A doping region is formed on the first polysilicon. A spacer is formed on sidewalls of the second polysilicons and a source/drain region(110) is formed. The element isolation film is formed between the second polysilicons. A dielectric layer(130) is formed so that it can cover the silicon substrate. The dielectric layer is eliminated so that a part of the protective film and a part of the second polysilicons in correspondence with the source/drain region are exposed.
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