| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve the junction property and voltage variation of an MIM capacitor by improving the surface uniformity of a silicide active area. CONSTITUTION: A gate electrode is formed on a semiconductor substrate. A source/drain region(7) is formed in the semiconductor substrate. A metal capacitor is formed on the semiconductor substrate. An interlayer dielectric layer(11) is formed on the semiconductor substrate. A plurality of contact plugs(12) pass through the interlayer dielectric layer. The metal wiring is formed on the interlayer dielectric layer and is connected to the contact plug. The contact plug includes a first contact plug connected to the source/drain region and a second contact plug connected to the capacitor.
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