发明名称 METHOD FOR PREVENTING PLASMA DAMAGE BY WAFER CHARGE UP
摘要 PURPOSE: A method for preventing plasma damage by wafer charge up is provided to prevent plasma damage by forging a buffer layer neutralizing charge transferred to the backside of a wafer. CONSTITUTION: In a method for preventing plasma damage by wafer charge up, an electrical buffer layer for re-distributed charges on a wafer backside is formed. The buffer neutralizes charges to prevent charge split. The electrical buffer layer makes positive charge implant. The electrical buffer layer is formed as a P-well.
申请公布号 KR20110078257(A) 申请公布日期 2011.07.07
申请号 KR20090135017 申请日期 2009.12.31
申请人 DONGBU HITEK CO., LTD. 发明人 CHOI, JIN SIK
分类号 H01L21/3065 主分类号 H01L21/3065
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