| 摘要 |
PURPOSE: An image sensor and method for manufacturing thereof are provided to eliminate the temperature restriction of a high temperature annealing process and improve reliability by forming a multi-layered protective film on the top conductive layer of an image device. CONSTITUTION: In an image sensor and a method for manufacturing thereof, at least one light receiving element is formed in a substrate(S300). At least one insulating layer is laminated on the substrate(S310). A conductive layer is formed on the insulating layer(S320). A multi-layered protective film is deposited on the top conductive layer to reduce the stress from the top conductive layer(S330). A final protective layer is formed on the multi-layered protective film(S340). The protective film is annealed by a high temperature(S350).
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