| 摘要 |
PURPOSE: A method for manufacturing a power device of a semiconductor device is provided to improve the reliability of a device without affecting a device property and resistance by suppressing and controlling a recess on a poly layer of a trench gate area using a dummy trench area. CONSTITUTION: A gate trench area is formed on a bottom layer(100'') of a semiconductor of a power device. A dummy trench area is formed on the preset area of the bottom layer of the semiconductor excluding a gate trench area. The dummy trench area is formed by a dry etching process or reactive ion etching process. A poly layer is deposited on the bottom layer of the semiconductor with the dummy trench area and the gate trench area. The poly recess is removed by etching the back of the poly layer.
|
